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the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

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发表于 2012-2-1 23:20:52 | 显示全部楼层 |阅读模式

Appl. Phys. Lett. 98, 103305 (2011); http://dx.doi.org/10.1063/1.3554381 (3 pages)

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

Mingjun Wang1,2Yuan Li1Huihui Huang1,2Eric D. Peterson1Wanyi Nie1Wei Zhou1Wei Zeng2Wenxiao Huang1Guojia Fang2Nanhai Sun2,Xingzhong Zhao2, and David L. Carroll1

1Department of Physics, Center for Nanotechnology and Molecular Materials, Wake Forest University, Winston-Salem, North Carolina 27109, USA 
2Key Laboratory of Acoustic and Photonic Materials and Devices of Ministry of Education and Department of Electronic Science and Technology, School of Physical Science and Technology, Wuhan University, Wuhan 430072, People’s Republic of China 

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