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n-ZnO/n-GaN isotype heterojunction light emitting diode

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发表于 2012-1-31 23:53:21 | 显示全部楼层 |阅读模式

Appl. Phys. Lett. 99, 263502 (2011); http://dx.doi.org/10.1063/1.3672051 (4 pages)

Ultraviolet/orange bicolor electroluminescence from an n-ZnO/n-GaN isotype heterojunction light emitting diode

Huihui Huang1Guojia Fang1Songzhan Li1,2Hao Long1Xiaoming Mo1Haoning Wang1Yuan Li3Qike Jiang4David L. Carroll3Jianbo Wang4,Mingjun Wang1, and Xingzhong Zhao1

1Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education of China, Department of Electronic Science & Technology, School of Physics and Technology, Wuhan University, Wuhan 430072, People’s Republic of China 
2College of Electronics and Information Engineering, Wuhan Textile University, Wuhan 430073, People’s Republic of China 
3Department of Physics, Center for nanotechnology and molecular materials, Wake Forest University, Winston-Salem, North Carolina 27109, USA 
4School of Physics and Technology, Center for Electron Microscopy and MOE Key Laboratory of Artifcial Micro- and Nano-structures, Wuhan University, Wuhan 430072, People’s Republic of China 

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(Received 16 September 2011; accepted 4 December 2011; published online 27 December 2011)


http://apl.aip.org/resource/1/applab/v99/i26/p263502_s1?bypassSSO=1


An ultraviolet-orange bi-color ZnO-GaN heterojunction light emitting diode light.jpg
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